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APT50GP60JDF2 IGBT Transistor

The APT50GP60JDF2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT50GP60JDF2 transistor as follows.

Circuit diagram symbol of the APT50GP60JDF2 transistor

APT50GP60JDF2 Transistor Specification

Transistor Code APT50GP60JDF2
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package SOT227
Collector Power Dissipation (Maximum) Pc 329W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.2V
Collector Current (Maximum) IC 100A
Operating Junction Temperature (Maximum) 150 oC

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