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APT50GN120B2 IGBT Transistor

The APT50GN120B2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT50GN120B2 transistor as follows.

Circuit diagram symbol of the APT50GN120B2 transistor

APT50GN120B2 Transistor Specification

Transistor Code APT50GN120B2
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TMAX
Collector Power Dissipation (Maximum) Pc 543W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.7V
Collector Current (Maximum) IC 134A
Operating Junction Temperature (Maximum) 150 oC

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