APT50GF60HR IGBT Transistor

The APT50GF60HR is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT50GF60HR transistor as follows.

APT50GF60HR Transistor Specification

Transistor Code		APT50GF60HR
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO258
Collector Power Dissipation (Maximum)	Pc	180W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	55A
Operating Junction Temperature (Maximum)		150 oC

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