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APT50GF120JRDQ3 IGBT Transistor

The APT50GF120JRDQ3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT50GF120JRDQ3 transistor as follows.

Circuit diagram symbol of the APT50GF120JRDQ3 transistor

APT50GF120JRDQ3 Transistor Specification

Transistor Code APT50GF120JRDQ3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package SOT227
Collector Power Dissipation (Maximum) Pc 521W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 3V
Collector Current (Maximum) IC 120A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 555
Rise Time 70

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