APT50GF120JRDQ3 IGBT Transistor

The APT50GF120JRDQ3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT50GF120JRDQ3 transistor as follows.

APT50GF120JRDQ3 Transistor Specification

Transistor Code		APT50GF120JRDQ3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	521W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	3V
Collector Current (Maximum)	IC	120A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		555
Rise Time		70

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