APT50GF120B2R IGBT Transistor

The APT50GF120B2R is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT50GF120B2R transistor as follows.

APT50GF120B2R Transistor Specification

Transistor Code		APT50GF120B2R
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TMAX
Collector Power Dissipation (Maximum)	Pc	390W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.9V
Collector Current (Maximum)	IC	80A
Operating Junction Temperature (Maximum)		150 oC

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