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APT45GP120J IGBT Transistor

The APT45GP120J is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT45GP120J transistor as follows.

Circuit diagram symbol of the APT45GP120J transistor

APT45GP120J Transistor Specification

Transistor Code APT45GP120J
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package SOT227
Collector Power Dissipation (Maximum) Pc 329W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 3.3V
Collector Current (Maximum) IC 75A
Operating Junction Temperature (Maximum) 150 oC

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