APT44GA60BD30C IGBT Transistor

The APT44GA60BD30C is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT44GA60BD30C transistor as follows.

APT44GA60BD30C Transistor Specification

Transistor Code		APT44GA60BD30C
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	337W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.6V
Collector Current (Maximum)	IC	78A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		358
Rise Time		14

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