APT43GA90BD30 IGBT Transistor

The APT43GA90BD30 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT43GA90BD30 transistor as follows.

APT43GA90BD30 Transistor Specification

Transistor Code		APT43GA90BD30
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	337W
Collector-Emitter Voltage (Maximum)	VCE	900V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	43A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		227
Rise Time		16

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