APT40GR120S IGBT Transistor

The APT40GR120S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT40GR120S transistor as follows.

APT40GR120S Transistor Specification

Transistor Code		APT40GR120S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268AB
Collector Power Dissipation (Maximum)	Pc	500W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	3.2V
Collector Current (Maximum)	IC	88A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		320
Rise Time		25

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