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APT40GP60J IGBT Transistor

The APT40GP60J is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT40GP60J transistor as follows.

Circuit diagram symbol of the APT40GP60J transistor

APT40GP60J Transistor Specification

Transistor Code APT40GP60J
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package SOT227
Collector Power Dissipation (Maximum) Pc 284W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.2V
Collector Current (Maximum) IC 86A
Operating Junction Temperature (Maximum) 150 oC

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