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APT40GP60B2DQ2G IGBT Transistor

The APT40GP60B2DQ2G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT40GP60B2DQ2G transistor as follows.

Circuit diagram symbol of the APT40GP60B2DQ2G transistor

APT40GP60B2DQ2G Transistor Specification

Transistor Code APT40GP60B2DQ2G
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 543W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.1V
Collector Current (Maximum) IC 62A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 395
Rise Time 29

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