APT40GF120JRDQ2 IGBT Transistor

The APT40GF120JRDQ2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT40GF120JRDQ2 transistor as follows.

APT40GF120JRDQ2 Transistor Specification

Transistor Code		APT40GF120JRDQ2
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	347W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	3.1V
Collector Current (Maximum)	IC	42A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		385
Rise Time		43

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