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APT36GA60BD15 IGBT Transistor

The APT36GA60BD15 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT36GA60BD15 transistor as follows.

Circuit diagram symbol of the APT36GA60BD15 transistor

APT36GA60BD15 Transistor Specification

Transistor Code APT36GA60BD15
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 290W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 1.9V
Collector Current (Maximum) IC 36A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 226
Rise Time 14

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