APT35GT120JU3 IGBT Transistor

The APT35GT120JU3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT35GT120JU3 transistor as follows.

APT35GT120JU3 Transistor Specification

Transistor Code		APT35GT120JU3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	260W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	55A
Operating Junction Temperature (Maximum)		150 oC

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