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APT35GP120JDQ2 IGBT Transistor

The APT35GP120JDQ2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT35GP120JDQ2 transistor as follows.

Circuit diagram symbol of the APT35GP120JDQ2 transistor

APT35GP120JDQ2 Transistor Specification

Transistor Code APT35GP120JDQ2
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package SOT227
Collector Power Dissipation (Maximum) Pc 284W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 3V
Collector Current (Maximum) IC 26A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 250
Rise Time 20

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