APT35GP120B2DQ2G IGBT Transistor

The APT35GP120B2DQ2G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT35GP120B2DQ2G transistor as follows.

APT35GP120B2DQ2G Transistor Specification

Transistor Code		APT35GP120B2DQ2G
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	543W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	3.9V
Collector Current (Maximum)	IC	96A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		250
Rise Time		20

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