APT35GN120SG IGBT Transistor

The APT35GN120SG is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT35GN120SG transistor as follows.

APT35GN120SG Transistor Specification

Transistor Code		APT35GN120SG
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268AB
Collector Power Dissipation (Maximum)	Pc	379W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	94A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		150
Rise Time		22

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