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APT35GN120BG IGBT Transistor

The APT35GN120BG is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT35GN120BG transistor as follows.

Circuit diagram symbol of the APT35GN120BG transistor

APT35GN120BG Transistor Specification

Transistor Code APT35GN120BG
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 379W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 1.9V
Collector Current (Maximum) IC 46A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 150
Rise Time 22

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