APT35GA90S IGBT Transistor

The APT35GA90S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT35GA90S transistor as follows.

APT35GA90S Transistor Specification

Transistor Code		APT35GA90S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268AB
Collector Power Dissipation (Maximum)	Pc	290W
Collector-Emitter Voltage (Maximum)	VCE	900V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	35A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		173
Rise Time		15

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