APT33GF120HR IGBT Transistor

The APT33GF120HR is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT33GF120HR transistor as follows.

APT33GF120HR Transistor Specification

Transistor Code		APT33GF120HR
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO258
Collector Power Dissipation (Maximum)	Pc	205W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	38A
Operating Junction Temperature (Maximum)		150 oC

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