APT33GF120B2RD IGBT Transistor

The APT33GF120B2RD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT33GF120B2RD transistor as follows.

APT33GF120B2RD Transistor Specification

Transistor Code		APT33GF120B2RD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TMAX
Collector Power Dissipation (Maximum)	Pc	300W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	52A
Operating Junction Temperature (Maximum)		150 oC

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