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APT32GU30B IGBT Transistor

The APT32GU30B is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT32GU30B transistor as follows.

Circuit diagram symbol of the APT32GU30B transistor

APT32GU30B Transistor Specification

Transistor Code APT32GU30B
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 250W
Collector-Emitter Voltage (Maximum) VCE 300V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.5V
Collector Current (Maximum) IC 55A
Operating Junction Temperature (Maximum) 150 oC

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