APT30GT60KRG IGBT Transistor

The APT30GT60KRG is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT30GT60KRG transistor as follows.

APT30GT60KRG Transistor Specification

Transistor Code		APT30GT60KRG
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220
Collector Power Dissipation (Maximum)	Pc	250W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	64A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		150
Rise Time		20

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