APT30GT60CR IGBT Transistor

The APT30GT60CR is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT30GT60CR transistor as follows.

APT30GT60CR Transistor Specification

Transistor Code		APT30GT60CR
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO254
Collector Power Dissipation (Maximum)	Pc	100W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	30A
Operating Junction Temperature (Maximum)		150 oC

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