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APT30GS60BRDQ2G IGBT Transistor

The APT30GS60BRDQ2G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT30GS60BRDQ2G transistor as follows.

Circuit diagram symbol of the APT30GS60BRDQ2G transistor

APT30GS60BRDQ2G Transistor Specification

Transistor Code APT30GS60BRDQ2G
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 250W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 3.25V
Collector Current (Maximum) IC 30A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 140
Rise Time 29

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