APT30GN60SG IGBT Transistor

The APT30GN60SG is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT30GN60SG transistor as follows.

APT30GN60SG Transistor Specification

Transistor Code		APT30GN60SG
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268AB
Collector Power Dissipation (Maximum)	Pc	463W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	49A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		295
Rise Time		18

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