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APT30GN60BG IGBT Transistor

The APT30GN60BG is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT30GN60BG transistor as follows.

Circuit diagram symbol of the APT30GN60BG transistor

APT30GN60BG Transistor Specification

Transistor Code APT30GN60BG
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 203W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 1.7V
Collector Current (Maximum) IC 37A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 70
Rise Time 14

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