APT30GN60BDQ2G IGBT Transistor

The APT30GN60BDQ2G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT30GN60BDQ2G transistor as follows.

APT30GN60BDQ2G Transistor Specification

Transistor Code		APT30GN60BDQ2G
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	203W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.9V
Collector Current (Maximum)	IC	63A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		70
Rise Time		14

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