APT28GA60BD15 IGBT Transistor

The APT28GA60BD15 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT28GA60BD15 transistor as follows.

APT28GA60BD15 Transistor Specification

Transistor Code		APT28GA60BD15
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	222W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.9V
Collector Current (Maximum)	IC	28A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		214
Rise Time		8

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