APT27GA90SD15 IGBT Transistor

The APT27GA90SD15 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT27GA90SD15 transistor as follows.

APT27GA90SD15 Transistor Specification

Transistor Code		APT27GA90SD15
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268AB
Collector Power Dissipation (Maximum)	Pc	223W
Collector-Emitter Voltage (Maximum)	VCE	900V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	27A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		145
Rise Time		8

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