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APT27GA90BD15 IGBT Transistor

The APT27GA90BD15 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT27GA90BD15 transistor as follows.

Circuit diagram symbol of the APT27GA90BD15 transistor

APT27GA90BD15 Transistor Specification

Transistor Code APT27GA90BD15
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 223W
Collector-Emitter Voltage (Maximum) VCE 900V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 2.2V
Collector Current (Maximum) IC 27A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 145
Rise Time 8

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