APT25GP90BDF1 IGBT Transistor

The APT25GP90BDF1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT25GP90BDF1 transistor as follows.

APT25GP90BDF1 Transistor Specification

Transistor Code		APT25GP90BDF1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	417W
Collector-Emitter Voltage (Maximum)	VCE	900V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.2V
Collector Current (Maximum)	IC	72A
Operating Junction Temperature (Maximum)		150 oC

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