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APT25GN120BG IGBT Transistor

The APT25GN120BG is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT25GN120BG transistor as follows.

Circuit diagram symbol of the APT25GN120BG transistor

APT25GN120BG Transistor Specification

Transistor Code APT25GN120BG
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 272W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 1.9V
Collector Current (Maximum) IC 33A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 105
Rise Time 17

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