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APT25GN120B IGBT Transistor

The APT25GN120B is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT25GN120B transistor as follows.

Circuit diagram symbol of the APT25GN120B transistor

APT25GN120B Transistor Specification

Transistor Code APT25GN120B
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 272W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.7V
Collector Current (Maximum) IC 67A
Operating Junction Temperature (Maximum) 150 oC

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