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APT20GN60KG IGBT Transistor

The APT20GN60KG is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT20GN60KG transistor as follows.

Circuit diagram symbol of the APT20GN60KG transistor

APT20GN60KG Transistor Specification

Transistor Code APT20GN60KG
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220
Collector Power Dissipation (Maximum) Pc 136W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 1.7V
Collector Current (Maximum) IC 24A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 50
Rise Time 10

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