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APT20GF120SRD IGBT Transistor

The APT20GF120SRD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT20GF120SRD transistor as follows.

Circuit diagram symbol of the APT20GF120SRD transistor

APT20GF120SRD Transistor Specification

Transistor Code APT20GF120SRD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package D3PAK
Collector Power Dissipation (Maximum) Pc 200W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.7V
Collector Current (Maximum) IC 32A
Operating Junction Temperature (Maximum) 150 oC

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