APT200GT60JRDL IGBT Transistor

The APT200GT60JRDL is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT200GT60JRDL transistor as follows.

APT200GT60JRDL Transistor Specification

Transistor Code		APT200GT60JRDL
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	595W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		546
Rise Time		160

UXPython is not the creator or an official representative of the APT200GT60JRDL IGBT transistor. You can download the official APT200GT60JRDL IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

IQIB75N60A3 IGBT Transistor APTGF100DA120T IGBT Transistor IXGP12N100U1 IGBT Transistor IXSH10N120A IGBT Transistor HGT1S7N60A4DS IGBT Transistor SGL50N60RUFD IGBT Transistor IXGP12N120A3 IGBT Transistor MWI15-12A6K IGBT Transistor IRGPS40B120U IGBT Transistor IRG4PC50KD IGBT Transistor STGP19NC60SD IGBT Transistor IXA12IF1200TC IGBT Transistor SKM150GAR12T4 IGBT Transistor IRG4PC30W IGBT Transistor SGL30N60RUFD IGBT Transistor IXGX400N30A3 IGBT Transistor APT50GT60BRG IGBT Transistor 20MT120UFP IGBT Transistor IRGIB6B60KD IGBT Transistor VS-EMG050J60N IGBT Transistor