APT200GN60J IGBT Transistor

The APT200GN60J is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT200GN60J transistor as follows.

APT200GN60J Transistor Specification

Transistor Code		APT200GN60J
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	568W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.45V
Collector Current (Maximum)	IC	250A
Operating Junction Temperature (Maximum)		150 oC

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