APT200GN60B2G IGBT Transistor

The APT200GN60B2G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT200GN60B2G transistor as follows.

APT200GN60B2G Transistor Specification

Transistor Code		APT200GN60B2G
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	682W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.65V
Collector Current (Maximum)	IC	158A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		461
Rise Time		80

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