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APT15GT60KR IGBT Transistor

The APT15GT60KR is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT15GT60KR transistor as follows.

Circuit diagram symbol of the APT15GT60KR transistor

APT15GT60KR Transistor Specification

Transistor Code APT15GT60KR
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220
Collector Power Dissipation (Maximum) Pc 135W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2V
Collector Current (Maximum) IC 31A
Operating Junction Temperature (Maximum) 150 oC

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