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APT15GP60BDLG IGBT Transistor

The APT15GP60BDLG is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT15GP60BDLG transistor as follows.

Circuit diagram symbol of the APT15GP60BDLG transistor

APT15GP60BDLG Transistor Specification

Transistor Code APT15GP60BDLG
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 250W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.1V
Collector Current (Maximum) IC 27A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 210
Rise Time 12

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