APT150GT120JR IGBT Transistor

The APT150GT120JR is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT150GT120JR transistor as follows.

APT150GT120JR Transistor Specification

Transistor Code		APT150GT120JR
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	830W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.7V
Collector Current (Maximum)	IC	170A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		1400
Rise Time		165

UXPython is not the creator or an official representative of the APT150GT120JR IGBT transistor. You can download the official APT150GT120JR IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

100MT060WDF IGBT Transistor 10N40C1D IGBT Transistor 10N40E1D IGBT Transistor 10N40F1D IGBT Transistor 10N50C1D IGBT Transistor 10N50F1D IGBT Transistor 12N60C3D IGBT Transistor 14N36GVL IGBT Transistor 1MB03D-120 IGBT Transistor 1MB05-120 IGBT Transistor 1MB05D-120 IGBT Transistor 1MB08-120 IGBT Transistor 1MB08D-120 IGBT Transistor 1MB10-120 IGBT Transistor 1MB10D-120 IGBT Transistor 1MB15D-060 IGBT Transistor 1MB20-060 IGBT Transistor 1MB20D-060 IGBT Transistor 1MB30-060 IGBT Transistor 1MBC03-120 IGBT Transistor