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APT13GP120K IGBT Transistor

The APT13GP120K is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT13GP120K transistor as follows.

Circuit diagram symbol of the APT13GP120K transistor

APT13GP120K Transistor Specification

Transistor Code APT13GP120K
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220
Collector Power Dissipation (Maximum) Pc 250W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 3.3V
Collector Current (Maximum) IC 41A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 90
Rise Time 12

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