APT13GP120BDQ1G IGBT Transistor

The APT13GP120BDQ1G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT13GP120BDQ1G transistor as follows.

APT13GP120BDQ1G Transistor Specification

Transistor Code		APT13GP120BDQ1G
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	250W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.9V
Collector Current (Maximum)	IC	41A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		90
Rise Time		12

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