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APT13GP120BDQ1G IGBT Transistor

The APT13GP120BDQ1G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT13GP120BDQ1G transistor as follows.

Circuit diagram symbol of the APT13GP120BDQ1G transistor

APT13GP120BDQ1G Transistor Specification

Transistor Code APT13GP120BDQ1G
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 250W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 3.9V
Collector Current (Maximum) IC 41A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 90
Rise Time 12

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