APT13GP120BDF1 IGBT Transistor

The APT13GP120BDF1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT13GP120BDF1 transistor as follows.

APT13GP120BDF1 Transistor Specification

Transistor Code		APT13GP120BDF1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	250W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.3V
Collector Current (Maximum)	IC	41A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		90
Rise Time		12

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