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APT12GT60KR IGBT Transistor

The APT12GT60KR is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT12GT60KR transistor as follows.

Circuit diagram symbol of the APT12GT60KR transistor

APT12GT60KR Transistor Specification

Transistor Code APT12GT60KR
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220
Collector Power Dissipation (Maximum) Pc 125W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2V
Collector Current (Maximum) IC 25A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 75
Rise Time 22

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