APT11GP60BDQB IGBT Transistor

The APT11GP60BDQB is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT11GP60BDQB transistor as follows.

APT11GP60BDQB Transistor Specification

Transistor Code		APT11GP60BDQB
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	187W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	41A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		110
Rise Time		9

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