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APT11GP60BDQB IGBT Transistor

The APT11GP60BDQB is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT11GP60BDQB transistor as follows.

Circuit diagram symbol of the APT11GP60BDQB transistor

APT11GP60BDQB Transistor Specification

Transistor Code APT11GP60BDQB
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 187W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.2V
Collector Current (Maximum) IC 41A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 110
Rise Time 9

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