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APT11GF120KRG IGBT Transistor

The APT11GF120KRG is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT11GF120KRG transistor as follows.

Circuit diagram symbol of the APT11GF120KRG transistor

APT11GF120KRG Transistor Specification

Transistor Code APT11GF120KRG
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220
Collector Power Dissipation (Maximum) Pc 156W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 3.1V
Collector Current (Maximum) IC 14A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 90
Rise Time 5

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