APT11GF120KR IGBT Transistor

The APT11GF120KR is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT11GF120KR transistor as follows.

APT11GF120KR Transistor Specification

Transistor Code		APT11GF120KR
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220
Collector Power Dissipation (Maximum)	Pc	125W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	22A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		70
Rise Time		45

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