APT11GF120BRD1 IGBT Transistor

The APT11GF120BRD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT11GF120BRD1 transistor as follows.

APT11GF120BRD1 Transistor Specification

Transistor Code		APT11GF120BRD1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	125W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	22A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		90
Rise Time		50

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